GaN Electronics for High Power, High Temperature Applications

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

Reliability of Cu nanoparticle joint for high temperature power electronics

Power cycle reliability of Cu nanoparticle joint has been studied for high temperature operation of power devices. Al2O3 heater chips and Cu–65 wt% Mo baseplates were joined by Cu nanoparticles and Sn–0.7Cu and power cycle tests of 65/200 C and 65/250 C were carried out on the joints. The Cu nanoparticles were prepared by reducing Cu carbonate in ethylene glycol with dodecanoic acid + dodecyl a...

AlGaN/GaN MODFET Device for High Temperature Applications

The objective of this paper is to investigate the feasibility and explore the potential of GaN-based devices for high temperature applications. An analytical temperature model based on modified charge control model is developed for the proposed device. The major tasks of this paper include the establishment of the compact model including the thermal effects and the validation of the analytical ...

GaN-Based Schottky Varactors for High-Power RF Applications

High Temperature Electronics Packaging

Materials and processes are being developed for packaging of low and medium power, high temperature electronics (up to 500). Ceramic (Al2O3 and AlN) hermetic packages are being used. Die attach techniques based on patterned Au bumps, Au-Si and off-eutectic Au-Sn have been demonstrated. Au thermosonic wire bonding provides a monometallic interconnect system between the die and the package pads. ...